US Patent Issued to CHINA RESOURCES MICROELECTRONICS (CHONGQING) on May 27 for "Shielded-gate-trench MOSFET and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,531, issued on May 27, was assigned to CHINA RESOURCES MICROELECTRONICS (CHONGQING) Co. LTD. (ChongQing, China).

"Shielded-gate-trench MOSFET and method for manufacturing the same" was invented by Fei Luo (ChongQing, China), Yuling Tang (ChongQing, China), Mingjiang He (ChongQing, China) and Jianwen Tan (ChongQing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SGT MOSFET comprising a substrate, an epitaxial layer, a masking dielectric layer, an interlayer dielectric layer, a source lead-out contact hole, and a source conductive layer and a method for manufacturing the SGT MOSFET are provided. The epitaxial layer is on an upper surface of t...