US Patent Issued to CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.24 RESEARCH INSTITUTE on Oct. 28 for "Power semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,787, issued on Oct. 28, was assigned to CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.24 RESEARCH INSTITUTE (Chongqing, China).

"Power semiconductor device and manufacturing method thereof" was invented by Kaizhou Tan (Chongqing, China), Tian Xiao (Chongqing, China), Jiahao Zhang (Chongqing, China), Yonghui Yang (Chongqing, China), Hequan Jiang (Chongqing, China), Ruzhang Li (Chongqing, China), Peijian Zhang (Chongqing, China), Yi Zhong (Chongqing, China), Peng Wang (Chongqing, China), Yuxin Wang (Chongqing, China), Xiaojun Fu (Chongqing, China) and Zhaohuan Tang (Chongqing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure pro...