ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,384, issued on Dec. 9, was assigned to China Electronic Product Reliability And Environmental Testing Research Institute (Guangzhou, China).

"Chip defect modifying device and method" was invented by Yiqiang Chen (Guangzhou, China), Yichi Zhang (Guangzhou, China) and Chang Liu (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A chip defect modifying device and a chip defect modifying method allow carbon dioxide to be in a supercritical state, enhance a passivation effect of hydrogen on the chip, heat a surface of the chip with microwaves emitted by a microwave module, and further promote a diffusion of hydrogen molecules and atoms in th...