US Patent Issued to Chengdu Sino Microelectronics Technology on Jan. 20 for "High-linearity dynamic amplifier" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,531, issued on Jan. 20, was assigned to Chengdu Sino Microelectronics Technology Co. Ltd. (Chengdu, China).

"High-linearity dynamic amplifier" was invented by Jinda Yang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high-linearity dynamic amplifier includes a first differential branch and a second differential branch. The first differential branch includes a first MOS transistor and a second MOS transistor which are connected between a high-level terminal and a ground-level terminal in series. A connection point of the first MOS transistor and the second MOS transistor is a second output terminal. The second differential branch in...