US Patent Issued to CHENGDU PBM TECHNOLOGY on Sept. 2 for "Method for manufacturing fully self-aligned high-density 3D multi-layer memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,334, issued on Sept. 2, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Chengdu, China).

"Method for manufacturing fully self-aligned high-density 3D multi-layer memory" was invented by Jack Zezhong Peng (Chengdu, China) and Ke Wang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for manufacturing a fully self-aligned high-density 3D multi-layer memory, which relates to the technical field of memory manufacturing. The method includes the following steps: 1) forming a base structure; 2) grooving the base structure; 3) filling an insulating medium in the division groove; 4) deep-hole etching the ins...