US Patent Issued to CHENGDU PBM TECHNOLOGY on Dec. 23 for "Underlying transistor circuit of semiconductor memory and preparation method for the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,866, issued on Dec. 23, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Sichuan, China).

"Underlying transistor circuit of semiconductor memory and preparation method for the same" was invented by Jack Zezhong Peng (Sichuan, China) and Ke Wang (Sichuan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are an underlying transistor circuit of a semiconductor memory and a preparation method for the same. The circuit includes a row line layer, a column line layer positioned above the row line layer, and an insulating isolation layer between the row line layer and the column line layer, with directions of the row lines and the column lines bein...