US Patent Issued to Chengdu Analog Circuit Technology on March 11 for "One-time programmable memory cell and memory thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,809, issued on March 11, was assigned to Chengdu Analog Circuit Technology Inc. (Chengdu, China).

"One-time programmable memory cell and memory thereof" was invented by Dan Ning (Sichuan, China) and Yulong Wang (Sichuan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an anti-fuse type one-time programmable memory cell. The memory cell includes a selection transistor and a gate capacitor, which are connected in series and located in a substrate, the substrate including an active region and an isolation region; in which the gate capacitor includes a gate, a gate oxide layer between the gate and the substrate, and...