US Patent Issued to CHENGDU ANALOG CIRCUIT TECHNOLOGY on June 17 for "Anti-fuse one-time programmable nonvolatile memory cell and memory thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,173, issued on June 17, was assigned to CHENGDU ANALOG CIRCUIT TECHNOLOGY INC.

"Anti-fuse one-time programmable nonvolatile memory cell and memory thereof" was invented by Ming Wang (Sichuan, China), Teng Feng Wang (Sichuan, China) and Meifang Lee (Sichuan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A one-time programmable nonvolatile memory cell includes a substrate providing a first conductivity type well and a second conductivity type well, a first MOS transistor having a floating gate and a gate oxide, and an auxiliary gate and a gate oxide formed by extending one end of the floating gate and the gate oxide of the first MOS transistor ...