US Patent Issued to CHANGXIN MEMORY TEHCNOLOGIES on Dec. 2 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,423, issued on Dec. 2, was assigned to CHANGXIN MEMORY TEHCNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor structure includes a first capacitive structure located on a substrate and first support columns. A plurality of first support columns are disposed on the substrate in parallel and spaced apart from each other, and are located in a same plane parallel to the substrate. The first capacitive structure includes a first lower electrode layer, a first di...