US Patent Issued to CHANGXIN MEMORY TECHNOLOGY on July 29 for "Anti-fuse array structure, operation method thereof and memory" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,293, issued on July 29, was assigned to CHANGXIN MEMORY TECHNOLOGY INC. (Hefei, China).

"Anti-fuse array structure, operation method thereof and memory" was invented by Chuangming Hou (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An anti-fuse array structure, an operation method thereof and a memory are provided. The anti-fuse array structure includes an anti-fuse array area and a selection circuit area. The anti-fuse array area includes a plurality of anti-fuse cells, and the selection circuit area includes a plurality of selection transistors. The selection circuit area is located on at least one side of the anti-fuse array area." ...