US Patent Issued to CHANGXIN MEMORY TECHNOLOGY on Jan. 27 for "Method for manufacturing conductive pillar structure for semiconductor substrate and conductive pillar structure for semiconductor substrate" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,769, issued on Jan. 27, was assigned to CHANGXIN MEMORY TECHNOLOGY INC. (Hefei, China).

"Method for manufacturing conductive pillar structure for semiconductor substrate and conductive pillar structure for semiconductor substrate" was invented by Kejun Mu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes the following operations. A base and a dielectric layer arranged on the base are provided. A first conductive pillar, a second conductive pillar and a third conductive pillar arranged in the dielectric layer are formed. A mask layer is formed. A portion of a thickness of the th...