US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES. on Sept. 16 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,043, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES. INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Yizhi Zeng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, a first isolation trench located in the substrate, a first insulating layer covering a bottom surface and a lower part of a sidewall of the first isolation trench, a second insulating layer covering an upper part of the sidewall of the first isolation trench, a...