US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 9 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,285, issued on Sept. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China), Jo-Lan Chin (Hefei, China) and Minki Hong (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base including bit lines arranged at intervals and extending along a first direction, and a semiconductor channel located on partial top surfaces of the bit lines, whe...