US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 9 for "Semiconductor structure and manufacturing method thereof, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,291, issued on Sept. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof, and memory" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, and a plurality of first semiconductor columns, a storage structure, a plurality of transistors and a first protective layer located above the substrate. The plurality of first semiconductor columns are arranged in array in first and second directions. Each first semiconductor column includes a first part and a second part l...