US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 9 for "Semiconductor structure and formation method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,286, issued on Sept. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and formation method thereof" was invented by Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a formation method thereof. The semiconductor structure includes: a substrate provided with semiconductor pillars arranged at intervals, the semiconductor pillars including a first doped region, a channel region and a second doped region sequentially arranged along a direction distant from a surface of the substrate; and a plurality of word lines extending along a firs...