US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 9 for "Semiconductor structure, memory, and crack testing method" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,790, issued on Sept. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, Taiwan).

"Semiconductor structure, memory, and crack testing method" was invented by Shuangshuang Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a through silicon via penetrating a base; and a protection structure, including: a conductive first test ring and a conductive second test ring both arranged around the through silicon via and electrically insulated from the through silicon via; a first dielectric layer located between the first test ring and the second test ring and configured to electrically isolate the f...