US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 9 for "Method and device for testing memory with instruction signal" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,611, issued on Sept. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method and device for testing memory with instruction signal" was invented by Yu Li (Hefei, China) and Beiyou Zhao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and a device for memory testing, and a computer-readable storage medium are provided. In the method, an instruction signal is sent to the memory, the instruction signal comprising a randomly generated write instruction or read instruction; a valid Column Address Strobe (CAS) instruction for ensuring running of the instruction signal is randomly inserted before the instruction s...