US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 30 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,903, issued on Sept. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Yong Lu (Hefei, China), Zhicheng Shi (Hefei, China), Xinran Liu (Hefei, China) and Ruiqi Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabricating method. The semiconductor structure includes: a substrate, where a trench is formed in the substrate; a conductive layer positioned in the trench, where the conductive layer includes a first conductive layer and a second conductive layer, the second conductive layer is p...