US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 30 for "Semiconductor structure and method for fabricating same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,908, issued on Sept. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Inho Park (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a method for fabricating the same. The method includes: providing a substrate, a first trench being formed in the substrate; forming a protective layer in the first trench, the protective layer covering a side wall and a bottom of the first trench; etching the protective layer and the substrate at the bottom of the first trench to form second trenches; forming a pas...