US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 30 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,385, issued on Sept. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Qinghua Han (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof, which relate to the field of semiconductors. The method includes: providing a base; forming a plurality of first trenches extending along a first direction in the base, the first trenches forming the base into semiconductor layers arranged at intervals, and filling the first trenches with a first isolation l...