US Patent Issued to Changxin Memory Technologies on Sept. 30 for "Semiconductor structure, method for forming semiconductor structure, and memory" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,902, issued on Sept. 30, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure, method for forming semiconductor structure, and memory" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor structure forming method includes: providing a base, where the base includes a substrate, a plurality of first semiconductor layers and second semiconductor layers; forming a first sidewall and a second sidewall, each including a support layer and an isolation layer formed on a side of the support layer; forming a plurality of recessed portions separated by the first sidewal...