US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 30 for "Package structure including a first non-conductive layer having a greater melt viscosity than a second non-conductive layer and method for fabricating the package structure" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,456, issued on Sept. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Package structure including a first non-conductive layer having a greater melt viscosity than a second non-conductive layer and method for fabricating the package structure" was invented by Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclose a package structure and a fabricating method. The package structure includes: a semiconductor chip; a first non-conductive layer covering a front surface of the semiconductor chip and part of a side wall of the semiconductor chip; a second non-conductive layer positioned on an...