US Patent Issued to Changxin Memory Technologies on Sept. 30 for "Method for forming three-dimensional semiconductor structure and semiconductor structure made thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,900, issued on Sept. 30, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Method for forming three-dimensional semiconductor structure and semiconductor structure made thereof" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This invention relates to a semiconductor structure and a method for forming the semiconductor structure. The method for forming a semiconductor structure includes the following steps: forming a stacking layer on a top surface of a substrate, where the stacking layer includes a plurality of semiconductor layers arranged at intervals in a first direction, and the stacking...