US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 30 for "Method for fabricating contact structure and contact structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,363, issued on Sept. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating contact structure and contact structure" was invented by Xin Xin (Hefei, China) and Jinghao Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating a contact structure and a contact structure. The method for fabricating a contact structure includes: providing a substrate, and sequentially arranging a first polysilicon layer and a first mask layer on a surface of the substrate; performing a first etching process on the first polysilicon layer and the first mask layer to form a stepp...