US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Wafer warpage adjustment structure and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,505, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Wafer warpage adjustment structure and method for manufacturing the same" was invented by Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer warpage adjustment structure is provided. The wafer warpage adjustment structure includes a wafer, a first dielectric layer, and a second dielectric layer. Each of the first and second dielectric layers includes at least a first area or a second area, and other areas other than at least the first area or the second area. The first area covers a portion of the wafer protruded in a directi...