US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure with semiconductor pillars and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,232, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with semiconductor pillars and method for manufacturing same" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China), Minki Hong (Hefei, China), Kyongtaek Lee (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate, a first gate structure, and a second gate structure. The substrate includes: discrete first semiconductor pillars arranged at a top of the substrate and extending in a vertical direction; and a...