US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure with increased number of stacked memory dies and method of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,280, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with increased number of stacked memory dies and method of manufacturing the same" was invented by Ling-Yi Chuang (Hefei, China) and Kaimin Lv (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor device are provided. The semiconductor structure comprises: a logic die provided with a first wireless communication component; a plurality of memory components arrayed in a first direction and stacked on an upper surface of the logic d...