US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure with a plurality of connection lines" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,240, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with a plurality of connection lines" was invented by Yi Tang (Hefei, China), Jianfeng Xiao (Hefei, China) and Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductors, and provide a semiconductor structure, including a substrate and connection lines. Structural cells arranged in an array are provided on the substrate, and include transistor groups arranged in a first direction, and the transistor groups include multi-layer transistors extending in a second direction. Th...