US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure for DRAM having a pillar lower electrode and formation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,234, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure for DRAM having a pillar lower electrode and formation method thereof" was invented by Deyuan Xiao (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a formation method thereof. The method for forming a semiconductor structure includes: forming a substrate and a semiconductor layer positioned above the substrate, where the semiconductor layer includes first trenches spaced along a first direction, the first direction being a direction paralle...