US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure comprising buried gate structure and isolation structure with air gap and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,252, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure comprising buried gate structure and isolation structure with air gap and method for manufacturing semiconductor structure" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes operations as follows. First mask pattern layers spaced apart on a base are formed. A first dielectric layer is deposited between the first mask pattern layers. The first dielectric layer is etched to form a first trench, the first trench exposing the base and a par...