US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,555, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and semiconductor device" was invented by Yulei Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a semiconductor device. The semiconductor structure includes a first conductive layer, a first barrier layer, and an insulating layer. The first conductive layer includes at least two traces, and a recess is formed between two adjacent ones of the traces. The first barrier layer is provided on a sidewall of the recess. The insulating layer fills the recess, and an...