US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,542, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Luguang Wang (Hefei, China) and Heng-Chia Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; bit lines located in the substrate and including a main body and a plurality of contact portions, the main body extending in a first direction, the contact portions being connected to the main body and extending toward the top surface of the substrate, and the plurality of contact portions being arranged at intervals in the first...