US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for manufacturing same, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,249, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same, and memory" was invented by Deyuan Xiao (Hefei, China), Xingsong Su (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed in the embodiments of the present disclosure are a semiconductor structure and method for manufacturing same, and a memory. The semiconductor structure includes: a plurality of first active columns arranged in an array along a first direction and a second direction, a plurality of first electrodes located in first grooves arranged a...