US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for manufacturing preparing same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,569, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing preparing same" was invented by Sungjin Kim (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a base layer, a device layer, and a stress propagating layer. The device layer is located on the base layer. The device layer includes a first dielectric layer and device structures. The first dielectric layer fills the device layer and isolates the device structures. The stress propagating layer is located on the device layer, includes a second dielectric layer and a ...