US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,246, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Gongyi Wu (Hefei, China), Ruigen Ding (Hefei, China), Xianxian Tang (Hefei, China), Nan Deng (Hefei, China) and Yuchen Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the c...