US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,237, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Youming Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes the following operations. A substrate is provided. The substrate includes double heterostructures arrayed along a first direction and a second direction. Each of the double heterostructures includes a first semiconductor layer, a second semiconductor layer and another first semiconductor layer sequentially arranged along the first direction. A forbidden band gap o...