US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,546, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Kui Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a base; a first conductive path including a first channel area and a first doped area and a second doped area located on two opposite ends of the first channel area; a first electrical connection structure located in the base and in contact with first doped area; a second electrical connection structure in contact with second doped area; a second conductive path including a second chan...