US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and method for fabricating the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,235, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating the same" was invented by Meng Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a method for fabricating the same. The method includes: providing a substrate, where a plurality of first trench initial structures are formed on the substrate, and the first trench initial structures extend along a first direction; and sequentially performing a thermal oxidation process and an oxide etching process on trench walls of the first trench initial s...