US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,258, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Zhaopei Cui (Hefei, China) and Ying Song (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, wire structures, support structures and storage node contact structures. Each wire structure includes a wire and an isolation structure located on the wire. The wire structures extend along a first direction. The support structures are located on a side of the wire structures away from the substrate. The support structures are arranged at...