US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,529, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Xiaoxuan Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate, a first pad being provided on the substrate; an adapter plate located on the substrate, and the bottom surface of the adapter plate covering the first pad, in which the adapter plate includes a second pad and a connecting structure, the second pad is located on any surface other than the bottom surface of the adapter plate, one end of the connecting structure is c...