US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure and manufacturing method thereof, memory chip and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,241, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof, memory chip and electronic device" was invented by Hong Wang (Hefei, China) and Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a substrate, wherein the substrate is provided with a stacked structure, the stacked structure comprising a plurality of memory cell groups arranged in a first direction, each of the memory cell groups comprising multiple layers of memory cells arranged in a second direction, the stacked structure further comprising ...