US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure, method for manufacturing semiconductor structure, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,251, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing semiconductor structure, and memory" was invented by Deyuan Xiao (Hefei, China), Guangsu Shao (Hefei, China), Weiping Bai (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes a substrate, a plurality of active pillars arranged above the substrate, a storage structure, and a plurality of transistors. The active pillars are arrang...