US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure, method for manufacturing semiconductor structure, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,255, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing semiconductor structure, and memory" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes: a plurality of first semiconductor pillars, a plurality of second semiconductor pillars, a first support layer, and a storage structure. The plurality of first semiconductor pillars are arranged in an array in ...