US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure, method for manufacturing semiconductor structure, and memory" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,519, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing semiconductor structure, and memory" was invented by Shuangshuang Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a base, including a substrate, a first isolation layer, a first dielectric layer, and a stop layer that are formed in a stack manner, a first contact hole being formed in the base; a first insulating layer and a first barrier layer sequentially formed on an inner wall of the first contact hole, a first contact structure being disposed in the firs...