US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor structure, method for manufacturing same and memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,236, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing same and memory" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor structure, a method for manufacturing the same and a memory. The semiconductor structure includes a plurality of active pillars and a plurality of conductor lines. Each of the conductor lines includes a plurality of metal layers located in a gap between two adjacent active pillars and a metal compound layer partially sur...