US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Semiconductor DRAM device structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,257, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor DRAM device structure and method for forming same" was invented by Xiang Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes that: a substrate is provided; bit line contact holes arranged at intervals, a bit line contact in partial contact with the bit line contact hole and a bit line structure are formed on the substrate; a first insulating layer is formed on surfaces of the substrate, the bit line contact hol...