US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 23 for "Memory and operating method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,268, issued on Sept. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory and operating method therefor" was invented by Kangling Ji (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes: a memory cell array; a first column decoder, coupled to the memory cell array and configured to perform a write operation on the memory cell array; a second column decoder, coupled to the memory cell array and configured to perform a read operation on the memory cell array; and a read amplifier, the read amplifier and the second column decoder being located on two opposite sides of the memory cell array, the read a...