US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 2 for "Semiconductor structure including bit lines and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,319, issued on Sept. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure including bit lines and fabrication method thereof" was invented by Kang You (Hefei, China) and Tangyu Pan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method includes: providing a substrate; forming bit lines arranged at intervals along a first direction on the substrate, a width of a top of each bit line being greater than a width of a bottom of each bit line; forming an initial isolation spacer covering each bit line, the initial isolation spacer including a first initial isolation layer, a second isolation layer ...