US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 2 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,858, issued on Sept. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Wei Chang (Hefei, China), Chun-Hsiang Chen (Hefei, China), Zhaohong Lv (Hefei, China), Yongchang Zhuo (Hefei, China) and Tieh-Chiang Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a substrate; a gate trench located in the substrate; a gate oxide layer located on a side wall and a bottom of the gate trench; and a gate c...