US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Vertical gate all around transistor having dual gate structures" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,034, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Vertical gate all around transistor having dual gate structures" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China), Minki Hong (Hefei, China), Kyongtaek Lee (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes: a substrate, a dielectric layer, a first gate structure and a second gate structure. The substrate includes discrete semiconductors arranged at a...